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| TO-220 Plastic Package TIP41, TIP41A, TIP41B, TIP41C TIP42, TIP42A, TIP42B, TIP42C Boca Semiconductor Corp TIP 41, 41A, 41B, 41C TIP 42, 42A, 42B, 42C General Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR (BSC) NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O MIN . 14.42 9.63 3.56 MAX. N L O 12 3 D G J M 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DEG 7 A O ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 6 A; IB = 0.6 A D.C. current gain IC = 3 A; VCE = 4 V VCBO VCEO IC Ptot Tj VCEsat hFE 41 42 max. 40 max. 40 max. max. max. max. min. max. 41 42 max. 40 max. 40 max. max. 41A 41B 42A 42B 60 80 60 80 6.0 65 150 1.5 15 75 41A 41B 42A 42B 60 80 60 80 5.0 6.0 41C 42C 100 100 41C 42C 100 100 V V A W C V RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current VCBO VCEO VEBO IC All dimin sions in mm. K V V V A http://www.bocasemi.com page: 1 TIP41, TIP41A, TIP41B, TIP41C TIP42, TIP42A, TIP42B, TIP42C Collector current (Peak value) Base current Total power dissipation up to TC = 25C Derate above 25C Total power dissipation up to TA = 25C Derate above 25C Junction temperature Storage temperature THERMAL RESISTANCE From junction to ambient From junction to case CHARACTERISTICS Tamb = 25C unless otherwise specified Collector cutoff current IB = 0; VCE = 30 V IB = 0; VCE = 60 V VBE = 0; VCE = VCEO Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 30 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltage IC = 6 A; IB = 0.6 A Base-emitter on voltage IC = 6 A; VCE = 4 V D.C. current gain IC = 0.3 A; VCE = 4 V IC = 3 A; VCE = 4 V Small-signal current gain IC = 0.5 A; VCE = 10 V; f = 1 KHz Transition frequency IC = 0.5 A; VCE = 10 V; f = 1 MHz ICM IB Ptot Ptot Tj Tstg Rth j-a Rth j-c max. max. max. max. max. max. max. 10 2.0 65 0.52 2.0 0.016 150 -65 to +150 62.5 1.92 A A W W /C W W /C C C C/W C/W 41 42 ICEO ICEO ICES IEBO max. 0.7 max. - max. max. 41A 41B 41C 42A 42B 42C 0.7 - - 0.7 0.4 1.0 60 60 5.0 1.5 2.0 30 15 75 20 3 MHz 80 80 100 100 - 0.7 mA mA mA mA V V V V V VCEO(sus)* min. 40 VCBO min. 40 VEBO min. VCEsat* VBE(on)* hFE* hFE* |h fe| fT max. max. min. min. max. min. min. (1) * Pulse test: pulse width 300 s, duty cycle 2%. (1) fT = |hfe|* ftest http://www.bocasemi.com page: 2 |
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